PD- 93897C SMPS MOSFET Applications High frequency DC-DC converters IRF7452 HEXFET® Power MOSFET VDSS 100V RDS(on) max 0.
060Ω ID 4.
5A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Ope...

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