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IRF7401PBF

International Rectifier
Part Number IRF7401PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description l Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dyna...
Datasheet PDF File IRF7401PBF PDF File

IRF7401PBF
IRF7401PBF

Overview
l Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.
8W is possible in a typical PCB mount application.
PD - 95724 IRF7401PbF HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D 6D 5D Top View VDSS = 20V RDS(on) = 0.
022Ω SO-8 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec.
Pulsed Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max.
10 8.
7 7.
0 35 2.
5 0.
02 ± 12 5.
0 -55 to + 150 Units A W W/°C V V/ns °C Thermal Resistance Ratings RθJA Parameter Maximum Junction-to-Ambient„ Typ.
––– Max.
50 Units °C/W 8/10/04 IRF7401PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transcond...


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