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IRF7401PBF-1

International Rectifier
Part Number IRF7401PBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description VDS RDS(on) max (@VGS = 4.5V) Qg ID (@TA = 25°C) 20 0.022 48 8.7 V Ω nC A IRF7401PbF-1 HEXFET® Power MOSFET S1 S2 S...
Datasheet PDF File IRF7401PBF-1 PDF File

IRF7401PBF-1
IRF7401PBF-1

Overview
VDS RDS(on) max (@VGS = 4.
5V) Qg ID (@TA = 25°C) 20 0.
022 48 8.
7 V Ω nC A IRF7401PbF-1 HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7401PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7401PbF-1 IRF7401TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec.
Pulsed Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Thermal Resistance Ratings RθJA Parameter Maximum Junction-to-Ambient„ Max.
10 8.
7 7.
0 35 2.
5 0.
02 ± 12 5.
0 -55 to + 150 Units A W W/°C V V/ns °C Typ.
––– Max.
50 Units °C/W 1 www.
irf.
com © 2013 International Rectifier Submit Datasheet Feedback November 18, 2013 IRF7401PbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Ciss Coss Crss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min.
Typ.
Max.
20 ––– ––– ––– 0.
044...


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