PD- 93895 SMPS MOSFET Applications l High frequency DC-DC converters IRF7464 HEXFET® Power MOSFET VDSS 200V RDS(on) max 0.
73Ω ID 1.
2A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recove...

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