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Part Number
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IRF7507 |
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Manufacturer
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International Rectifier |
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Description
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Power MOSFET |
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Published
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Apr 16, 2005 |
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Detailed Description
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PD - 91269I
IRF7507
HEXFET® Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Ch...
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Datasheet
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IRF7507
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Overview
PD - 91269I
IRF7507
HEXFET® Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (1.
1mm) Available in Tape & Reel Fast Switching
S1 G1 S2 G2
N-C HANNE L M O S F E T 1 8
D1 D1 D2 D2
N-Ch
P-Ch
2
7
3
6
VDSS
20V
-20V
4
5
P -C HANNE L M O S F E T
T op V ie w
RDS(on) 0.
135Ω 0.
27Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with a...
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