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IRF7507

International Rectifier
Part Number IRF7507
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 91269I IRF7507 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Ch...
Datasheet PDF File IRF7507 PDF File

IRF7507
IRF7507

Overview
PD - 91269I IRF7507 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.
1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8 D1 D1 D2 D2 N-Ch P-Ch 2 7 3 6 VDSS 20V -20V 4 5 P -C HANNE L M O S F E T T op V ie w RDS(on) 0.
135Ω 0.
27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline.
This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.
1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
M icro 8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µS Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Soldering Temperature, for 10 seconds N-Channel 20 2.
4 1.
9 19 1.
25 0.
8 10 ± 12 16 5.
0 -5.
0 -55 to + 150 240 (1.
6mm from case) Max.
P-Channel -20 -1.
7 -1.
4 -14 Units V A W W mW/°C V V V/ns °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient „ Max.
100 Units °C/W www.
irf.
com 1 12/1/98 IRF7507 Electrical Characteristics @ TJ = 25°C (unless ot...


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