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Part Number
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IRF7530 |
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Manufacturer
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International Rectifier |
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Description
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Power MOSFET |
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Published
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Apr 16, 2005 |
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Detailed Description
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PD-93760B
IRF7530
HEXFET® Power MOSFET
q q q q q q
Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Ver...
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Datasheet
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IRF7530
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Overview
PD-93760B
IRF7530
HEXFET® Power MOSFET
q q q q q q
Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (1.
1mm) Available in Tape & Reel
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = 20V RDS(on) = 0.
030Ω
3
6
4
5
Description
New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 package has half the footprint ...
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