Part Number
|
IRF7601 |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 9.1261D
IRF7601
HEXFET® Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance N-Channel MOSF...
|
Datasheet
|
IRF7601
|
Overview
PD - 9.
1261D
IRF7601
HEXFET® Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (1.
1mm) Available in Tape & Reel Fast Switching
S S S G
1 2
8 7
A A D D D D
VDSS = 20V RDS(on) = 0.
035Ω
3 4
6
5
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 p...
Similar Datasheet