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IRF7607

International Rectifier
Part Number IRF7607
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 93845 PROVISIONAL IRF7607 HEXFET® Power MOSFET 1 8 Trench Technology q Ultra Low On-Resistance q N-Channel MOSFET...
Datasheet PDF File IRF7607 PDF File

IRF7607
IRF7607

Overview
PD - 93845 PROVISIONAL IRF7607 HEXFET® Power MOSFET 1 8 Trench Technology q Ultra Low On-Resistance q N-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.
1mm) q Available in Tape & Reel q S S S G A A D D D D 2 7 VDSS = 20V RDS(on) = 0.
030Ω 3 6 4 5 T o p V ie w Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8™ package has half the footprint area of the standard SO-8.
This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium.
The low profile (<1.
1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro8 ™ Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
20 6.
5 5.
2 50 1.
8 1.
2 0.
014 ± 12 -55 to + 150 Units V A W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max.
70 Units °C/W www.
irf.
com 1 1/19/00 IRF7607 V(BR)DSS ∆V(BR)DSS/∆TJ PROVISIONAL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Char...


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