IRF9640, RF1S9640SM
Data Sheet July 1999 File Number
2284.
2
11A, 200V, 0.
500 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon-gate power field-effect
transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices.
The high input impedance allows these types to be operated directly from integrated circuits.
Formerly developmental type TA17522.
Features
• 11A, 200V • rDS(ON) = 0.
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