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IRF9620

Intersil Corporation
Part Number IRF9620
Manufacturer Intersil Corporation
Description P-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description IRF9620 Data Sheet July 1999 File Number 2283.2 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancemen...
Datasheet PDF File IRF9620 PDF File

IRF9620
IRF9620


Overview
IRF9620 Data Sheet July 1999 File Number 2283.
2 3.
5A, 200V, 1.
500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17502.
Features • 3.
5A, 200V • rDS(ON) = 1.
500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRF9620 PACKAGE TO-220AB BRAND IRF9620 G S NOTE: When ordering, use the entire part number.
Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-21 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.
intersil.
com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF9620 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF9620 -200 -200 -3.
5 -2 -14 ±20 40 0.
32 290 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) .
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VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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VDGR Continuous Drain Current .
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ID TC = 100oC .
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ID Pulsed Drain Current (Note 3...


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