IRFD220
Data Sheet July 1999 File Number
2317.
3
0.
8A, 200V, 0.
800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect
transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09600.
Features
• 0.
8A, 200V • rDS(ON) = 0.
800Ω...