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IRFD212

Part Number	IRFD212
Manufacturer	GE
Description	FIELD EFFECT POWER TRANSISTOR
Published	Feb 10, 2019
Detailed Description	~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel...
Datasheet	IRFD212 PDF File

Overview

~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.
45 AMPERES 200, 150 VOLTS RDS(ON) = 2.
4 il This series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power .
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features • Polysilicon gate - Improved stability and reliability • No ...

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