TPCS8212
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8212
Lithium Ion Battery Applications
• • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.
) High forward transfer admittance: |Yfs| = 11 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.
5~1.
2 V (VDS = 10 V, ID = 200 µA) Common drain Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 ±12 6 24 1.
1 Unit V V V ...