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TPCS8201

Toshiba Semiconductor
Part Number TPCS8201
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Nov 22, 2014
Detailed Description TPCS8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8201 Lithium Ion Battery Application...
Datasheet PDF File TPCS8201 PDF File

TPCS8201
TPCS8201


Overview
TPCS8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.
) l High forward transfer admittance: |Yfs| = 13 S (typ.
) l Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) l Enhancement-mode: Vth = 0.
5~1.
2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Single-device Drain power dissipation operation (Note ...



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