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TPCS8204

Part Number	TPCS8204
Manufacturer	Toshiba Semiconductor
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Published	Apr 16, 2005
Detailed Description	TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Application...
Datasheet	TPCS8204 PDF File

Overview

TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.
) High forward transfer admittance: |Yfs| = 15 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.
5~1.
2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch ...

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