Semiconductor
RFL1N08, RFL1N10
1A, 80V and 100V, 1.
200 Ohm, N-Channel, Power MOSFETs
Description
These are N-channel enhancement mode silicon-gate power field-effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09282.
September 1998
Features
• 1A, 80V and 100V • rDS(ON) = 1.
200Ω
[ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.
200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel...