RFP30N06LE, RF1S30N06LESM
Data Sheet April 1999 File Number
3629.
2
30A, 60V, ESD Rated, 0.
047 Ohm, Logic Level N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching
regulators, switching converters, motor drivers and relay drivers.
These
transistors can be operated directly from integrated circuits.
These
transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type...