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RF1S30N06LE

Part Number	RF1S30N06LE
Manufacturer	Harris
Description	N-Channel Enhancement-Mode Power MOSFETs
Published	May 17, 2015
Detailed Description	RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-C...
Datasheet	RF1S30N06LE PDF File

Overview

RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Features • 30A, 60V • rDS(ON) = 0.
047Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated circuits.
These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD.
Packages JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN...

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