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RF1S30N06LESM

Fairchild Semiconductor
Part Number RF1S30N06LESM
Manufacturer Fairchild Semiconductor
Description 30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs
Published Apr 16, 2005
Detailed Description S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Ch...
Datasheet PDF File RF1S30N06LESM PDF File

RF1S30N06LESM
RF1S30N06LESM

Overview
S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC TO-220AB SOURCE DRAIN GATE July 1995 Features • 30A, 60V • rDS(ON) = 0.
047Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve DRAIN (FLANGE) JEDEC TO-262AA Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated circuits.
These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD.
PACKAGE AVAIL...


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