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PTB 20006 4 Watts, 860–900 MHz Cellular Radio RF Power
Transistor
Description
The 20006 is a class AB,
NPN, common emitter RF power
transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band.
Rated at 4 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
4 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs.
Input Power
12
Output Power (Watts)
10 8 6 4 2 0 0.
00
200 06
LOT COD E
V...