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PTB20017

Part Number	PTB20017
Manufacturer	Ericsson
Description	150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
Published	Apr 16, 2005
Detailed Description	e PTB 20017 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common e...
Datasheet	PTB20017 PDF File

Overview

e PTB 20017 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band.
Rated at 150 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
150 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 150 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs.
Input Power 240 Output Power (Watts) 200 160 120 80...

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