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PTB 20080 25 Watts, 1.
6–1.
7 GHz RF Power
Transistor
Description
ThPTB 20080 is a class A/AB,
NPN, silicon bipolar junction, internallymatched RF power
transistor intended for 26 Vdc operation from 1.
6 to 1.
7 GHz.
It is rated at 25 Watts minimum output power for PEP applications.
Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
25 Watts, 1.
6–1.
7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power & Efficiency vs.
Input Power
40 80
30
60
Output Power (Watts)
20
40
VCC = 26 V
10
ICQ = 125 mA f = 1.
65 GH...