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PTB 20082 15 Watts, 1.
8–2.
0 GHz Cellular Radio RF Power
Transistor
Description
The 20082 is a class AB,
NPN, common emitter RF power
transistor intended for 26 Vdc operation from 1.
8 to 2.
0 GHz.
Rated at 15 watts output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
10 Watts Linear Power Output Power at 1 dB Compressed = 15 W Class AB Characteristics 30% Collector Efficiency at 7.
5 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs.
Input Power
20
Output Power (Watts)
16 12 8 4 0 0 1 2 3 4
200 82
LOT...