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PTB 20111 85 Watts, 860–900 MHz Cellular Radio RF Power
Transistor
Description
The 20111 is a class AB,
NPN, common emitter RF power
transistor intended for 25 Vdc operation from 860 to 900 MHz.
Rated at 85 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
25 Volt, 860–900 MHz Characteristics - Output Power = 85 Watts - Collector Efficiency = 50% at 85 Watts - IMD = -30 dBc Max at 60 W(PEP) Class AB Characteristics Gold Metallization Silicon Nitride Passivated
Typical Output Power vs.
Input Power
100 ...