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PTB20125

Ericsson
Part Number PTB20125
Manufacturer Ericsson
Description 100 Watts/ 1.8-2.0 GHz PCN/PCS Power Transistor
Published Apr 16, 2005
Detailed Description e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transist...
Datasheet PDF File PTB20125 PDF File

PTB20125
PTB20125


Overview
e PTB 20125 100 Watts, 1.
8–2.
0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.
8 to 2.
0 GHz.
Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a final stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
• • • • • 100 Watts, 1.
8–2.
0 GHz Class AB Characteristics 40% Collector Efficiency at 100 Watts Gold Metallization Silicon Nitride Passivated Typical POUT, Gain & Efficiency (at P-1dB) vs.
Frequency 11 Output Power (W) 140 120 Gain (dB) 10 9 8 7 6 VCC = 26 V ICQ = 200 mA 100 80 Output Power & Efficiency 12 2012 5 LOT COD E Gain (dB) 60 40 Efficiency (%) 20 2050 5 1750 1800 1850 1900 1950 2000 Frequency (MHz) Package 20225 * Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 55 55 4.
0 14 400 2.
3 –40 to +150 0.
44 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W * This product not recommended or specified for CW or class A operation.
Recommend two PTB 20175 for these applications.
1 5/1 9/98 PTB 20125 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 100 mA IC = 0 A, IE = 20 mA VCE = 10 V, IC = 1.
5 A Symbol V(BR)CES V(BR)EBO hFE Min 55 4.
0 30 Typ — 5.
0 50 Max — — 120 Units Volts Volts — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 40 W(PEP), ICQ = 2 x 100 mA, f = 2 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 100 W, ICQ = 2 x 100 mA, f = 2 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 100 W(PEP), ICQ = 2 x ...



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