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PTB20146

Ericsson
Part Number PTB20146
Manufacturer Ericsson
Description 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
Published Apr 16, 2005
Detailed Description e PTB 20146 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20146 is a class A, NPN, common emi...
Datasheet PDF File PTB20146 PDF File

PTB20146
PTB20146

Overview
e PTB 20146 0.
4 Watt, 1.
8–2.
0 GHz Cellular Radio RF Power Transistor Description The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.
8 to 2.
0 GHz.
Rated at 0.
4 watt minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
• • • • • • • 0.
4 Watt, 1.
8–2.
0 GHz Class A Characteristics Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs.
Input Power 1.
0 VCC = 26 V Output Power (Watts) 0.
8 0.
6 0.
4 0.
2 0.
0 0.
00 ICQ = 140 mA f = 2.
0 GHz 20 14 6 LO TC OD E 0.
02 0.
04 0.
06 0.
08 0.
10 Input Power (Watts) Package 20208 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) 1 9/28/98 TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.
0 0.
5 5.
4 0.
031 –40 to +150 32.
3 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W PTB 20146 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA, RBE = 22 Ω VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 20 Typ — — 5 40 Max — — — — Units Volts Volts Volts — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 0.
4 W, ICQ = 140 mA, f = 2.
0 GHz) Output Power at 1 dB Compressed (VCC = 26 Vdc, ICQ = 140 mA, f = 2.
0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 0.
4 W, ICQ = 140 mA, f = 2.
0 GHz—all phase angles at frequency of test) Symbol Gpe P-1dB Ψ Min 8 0.
4 — Typ 10 ...


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