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PTB 20134 30 Watts, 860–900 MHz Cellular Radio RF Power
Transistor
Description
The 20134 is a class AB,
NPN, common emitter RF power
transistor intended for 25 Vdc operation from 860 to 900 MHz.
Rated at 30 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
30 Watts, 860–900 MHz Class AB Characteristics 50% Min Collector Efficiency at 30 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs.
Input Power
50
Output Power (Watts)
VCC = 25 V
40 30 20 10 0 0 1 2 3 4 5
ICQ = 100 mA ...