e
PTB 20146 0.
4 Watt, 1.
8–2.
0 GHz Cellular Radio RF Power
Transistor
Description
The 20146 is a class A,
NPN, common emitter RF power
transistor intended for 26 Vdc operation from 1.
8 to 2.
0 GHz.
Rated at 0.
4 watt minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
0.
4 Watt, 1.
8–2.
0 GHz Class A Characteristics Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power vs.
Input Power
1.
0...