e
PTB 20151 45 Watts, 1.
8–2.
0 GHz PCN/PCS Power
Transistor
Description
The 20151 is a class AB,
NPN common emitter RF power
transistor intended for 26 Vdc operation from 1.
8 to 2.
0 GHz.
Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
45 Watts, 1.
8–2.
0 GHz Class AB Characteristics 40% Collector Efficiency at 45 W Gold Metallization Silicon Nitride Passivated
Typical Output Power vs.
Input Power
70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9...