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PTB 20166 23 Watts, 675–925 MHz Common Base RF Power
Transistor
Description
The 20166 is an
NPN, common base RF power
transistor intended for 24–30 Vdc class C operation from 675 to 925 MHz.
Rated at 23 watts minimum output power, it may be used for both CW and pulsed applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
Specified at 28 Volt, 925 MHz Class C Characteristics 55% Min Collector Efficiency at 23 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs.
Input Power
30 25 20 15 10 5 0 0.
0 0.
5 1.
0 1.
5 2.
0 2.
5 3.
0
Output Power (Watts)
2...