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PTB 20167 60 Watts, 850–960 MHz RF Power
Transistor
Description
The 20167 is an
NPN, common base RF power
transistor intended for 24 Vdc operation from 850 to 960 MHz.
Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
24 Volt, 905 MHz Common Base Characteristics - Output Power = 60 W - Power Gain = 7.
0 dB Min - Efficiency = 60% Min Double Input/Output Matched for Wideband Performance Gold Metallization Silicon Nitride Passivated
Typical Output Power vs.
Input Power
70
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