e
PTB 20180 2.
5 Watts, 1.
8–2.
0 GHz Cellular Radio RF Power
Transistor
Description
The 20180 is a class AB,
NPN, common emitter RF power
transistor intended for 26 Vdc operation from 1.
8 to 2.
0 GHz.
Rated at 2.
5 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
2.
5 Watts, 1.
8–2.
0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power vs.
Input Power
1.
0
Output Power (Watts)
0.
8 0.
6 0.
4
20 18 0
LO TC OD E
VCC = 26...