DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23001X; PTB23003X; PTB23005X
NPN microwave power
transistors
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power
transistors
FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal resistance • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and relia...