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PTB23006U

Part Number	PTB23006U
Manufacturer	NXP
Description	Microwave power transistor
Published	Apr 16, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary speciﬁcation Supersedes data of De...
Datasheet	PTB23006U PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary speciﬁcation Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary speciﬁcation Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life • Multicell geometry improves power sharing and reduces thermal resistance • Internal input prematching network.
APPLICATIONS Intended for use in common-base, class C power amplifiers at frequencies up to 2.
3 GHz.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.
3 2 Top view MAM131 PTB23006U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband ampliﬁer.
MODE OF OPERATION Class C (CW) f ...

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