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PTB23002U

NXP
Part Number PTB23002U
Manufacturer NXP
Description NPN microwave power transistor
Published Apr 16, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of No...
Datasheet PDF File PTB23002U PDF File

PTB23002U
PTB23002U

Overview
DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life • Multicell geometry improves power sharing and reduces thermal resistance.
APPLICATIONS Common-base, class C power amplifiers at frequencies up to 2.
3 GHz.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.
3 2 Top view MAM131 PTB23002U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier.
MODE OF OPERATION Class C (CW) f (GHz) 2.
3 VCC (V) 28 PL (W) >2 Gp (dB) >9 ηC (%) >45 Zi; ZL ( Ω) see Figs 5 and 6 PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION handbook, 4 columns 1 c b e Fig.
1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions.
After use, dispose of as chemical or special waste according to the regulations applying at the location of the user.
It must never be thrown out with the general or domestic waste.
1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld Note 1.
Up to 0.
2 mm from ceramic.
PARAMETER collector-base voltage collector-emitt...


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