DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D031
PTB23003X
NPN microwave power
transistor
Product specification Supersedes data of 1997 Feb 19 1997 Nov 13
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal resistance • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.
APPLICATIONS Common-base, class...