DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23006U Microwave power
transistor
Preliminary specification Supersedes data of December 1994 1997 Feb 19
Philips Semiconductors
Preliminary specification
Microwave power
transistor
FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life • Multicell geometry improves power sharing and reduces thermal resistance • Internal input prematching network.
APPLICATIONS Intended for use in common-base, class C power amplifiers at frequencies up to 2.
3 GHz.
DESCRIPTION
NPN silicon planar epi...