Part Number
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BTS110 |
Manufacturer
|
Infineon Technologies AG |
Description
|
TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) |
Published
|
Apr 17, 2005 |
Detailed Description
|
TEMPFET® BTS 110
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The drai...
|
Datasheet
|
BTS110
|
Overview
TEMPFET® BTS 110
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab
3 1 2
Pin
1 G
2 D
3 S
Type BTS 110
VDS
100 V
ID
10 A
RDS(on)
0.
2 Ω
Package TO-220AB
Ordering Code C67078-A5008-A2
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.
5 V Pulsed drain current, Short circuit current, Symbol Values 100 100 ± 20 10 1.
75 40 37 500 40 – 55 .
.
.
+ 150 E 55/150/56 K/W ≤ 3.
1 ≤ 75 °C – W A Unit V
VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg
– –
TC = 25 °C ...
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