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BTS112A

Infineon Technologies AG
Part Number BTS112A
Manufacturer Infineon Technologies AG
Description TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
Published Apr 17, 2005
Detailed Description TEMPFET® BTS 112 A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The dr...
Datasheet PDF File BTS112A PDF File

BTS112A
BTS112A


Overview
TEMPFET® BTS 112 A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A VDS 60 V ID 12 A RDS(on) 0.
15 Ω Package TO-220AB Ordering Code C67078-S5014-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.
5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 20 12 2.
5 48 27 400 40 – 55 .
.
.
+ 150 E 55/150/56 K/W ≤ 3.
1 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 .
.
.
+ 150 °C Short circuit dissipation, Tj = – 55 .
.
.
+ 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA 1 19.
02.
04 TEMPFET® BTS 112 A Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
Static Characteristics Drain-source breakdown voltage Values typ.
max.
Unit V(BR)DSS 60 – 3.
0 – 3.
5 V VGS = 0, ID = 0.
25 mA Gate threshold voltage VGS = VDS, ID = 1.
0 mA Zero gate voltage drain current VGS = 60 V, VDS = 0 Tj = 25 °C Tj = 150 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID = 7.
5 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 7.
5 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz VGS(th) 2.
5 I DSS – – 0.
1 10 1.
0 100 µA I GSS – – 10 2 0.
12 100 4 0.
15 nA µA Ω – RDS(on) gfs 3.
0 5.
7 360 160 50 15 30 40 55 – S pF – 480 250 90 25 45 55 75 ns Ciss Coss – Crss – – – – – Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t r T...


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