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BTS113A

Siemens Semiconductor Group
Part Number BTS113A
Manufacturer Siemens Semiconductor Group
Description TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
Published Apr 17, 2005
Detailed Description TEMPFET® BTS 113A Features q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor charact...
Datasheet PDF File BTS113A PDF File

BTS113A
BTS113A

Overview
TEMPFET® BTS 113A Features q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 113A VDS 60 V ID 11.
5 A RDS(on) 0.
17 Ω Package TO-220AB Ordering Code C67078-S5015-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.
5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 10 11.
5 2.
2 46 27 400 40 – 55 .
.
.
+ 150 E 55/150/56 K/W ≤ 3.
1 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 .
.
.
+ 150 °C Short circuit dissipation, Tj = – 55 .
.
.
+ 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group 1 04.
97 BTS 113A Electrical Characteristics at Tj = 25 °C, unless otherwise specified.
Parameter Symbol min.
Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.
25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 60 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 4.
5 V, ID = 5.
8 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 5.
8 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 5.
0 V, ID = 3.
0 A, RGS = 50 Ω Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 5.
0 V, ID = 3.
0 A, RGS = 50 Ω Values typ.
max.
Unit V(BR)DSS 60 – 2.
0 – 2.
5 V VGS(th) 1.
6 IDSS – – 0.
1 10 1.
0 100 µA IGSS – – 10 2 0.
14 100 4 0.
17 nA µA Ω – RDS...


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