Part Number
|
BTS112A |
Manufacturer
|
Siemens Semiconductor Group |
Description
|
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) |
Published
|
Apr 17, 2005 |
Detailed Description
|
TEMPFET®
BTS 112A
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The dr...
|
Datasheet
|
BTS112A
|
Overview
TEMPFET®
BTS 112A
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab
1 2 3
Pin
1 G
2 D
3 S
Type BTS 112A
VDS
60 V
ID
12 A
RDS(on)
0.
15 Ω
Package TO-220AB
Ordering Code C67078-S5014-A3
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.
5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 20 12 2.
5 48 27 400 40 – 55 .
.
.
+ 150 E 55/150/56 K/W ≤ 3.
1 ≤ 75 °C – W A Unit V
VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg
– –
TC = 25 °C ...
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