PRELIMINARY DATA SHEET
SILICON
TRANSISTOR
µPA800T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The µPA800T has built-in 2 low-voltage
transistors which are designed to amplify low noise in the VHF band to the UHF band.
PACKAGE DRAWINGS
(Unit: mm)
2.
1±0.
1 1.
25±0.
1
FEATURES
• Low Noise
0.
65 0.
65
1.
3
• High Gain |S21e|2 = 6.
5 dB TYP.
@ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Mini Mold Package Adopted • Built-in 2
Transistors (2 × 2SC4228)
2.
0±0.
2
2
3
0.
7
PART NUMBER
QUANTITY Loose products (50 PCS)
PACKING STYLE Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape...