DATA SHEET
SILICON
TRANSISTOR
µPA808T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
• Low Noise NF = 1.
3 dB TYP.
@VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.
3 dB TYP.
@VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2
Transistors (2 × 2SC5184)
2.
0±0.
2
PACKAGE DRAWINGS (Unit: mm)
2.
1±0.
1 1.
25±0.
1
1.
3
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) Taping products (3 KPCS/Reel) PACKING STYLE Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
0.
65
2
µPA808T µPA808T-T1
0.
65
3
0.
9±0.
1
pcs.
)
ABSOLUTE MAXIMU...