PRELIMINARY DATA SHEET
SILICON
TRANSISTOR
µPA809T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
• Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.
5 dB TYP.
@VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.
7 dB TYP.
@VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current
PACKAGE DRAWINGS
(Unit: mm)
2.
1±0.
1 1.
25±0.
1
0.
65 0.
65
1.
3
IC = 100 mA • A Mini Mold Package Adopted • Built-in 2
Transistors (2 × 2SC5193)
2.
0±0.
2
2
3
0.
9±0.
1
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to p...