Part Number
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VTE1113 |
Manufacturer
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PerkinElmer Optoelectronics |
Description
|
GaAs Infrared Emitting Diodes |
Published
|
Apr 17, 2005 |
Detailed Description
|
GaAs Infrared Emitting Diodes
TO-46 Lensed Package — 940 nm
VTE1113
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 24...
|
Datasheet
|
VTE1113
|
Overview
GaAs Infrared Emitting Diodes
TO-46 Lensed Package — 940 nm
VTE1113
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .
018" X .
018"
This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): -55°C to 125°C 200 mW 2.
11 mW/°C 100 mA 1.
05 mA/°C 3.
0 A -.
8%/°C Maximum Reverse Voltage: Ma...
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