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VTE1163

PerkinElmer Optoelectronics
Part Number VTE1163
Manufacturer PerkinElmer Optoelectronics
Description GaAlAs Infrared Emitting Diodes
Published Apr 17, 2005
Detailed Description GaAlAs Infrared Emitting Diodes TO-46 Lensed Package — 880 nm VTE1163 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE ...
Datasheet PDF File VTE1163 PDF File

VTE1163
VTE1163

Overview
GaAlAs Infrared Emitting Diodes TO-46 Lensed Package — 880 nm VTE1163 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .
018" x .
018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): -55°C to 125°C 200 mW 2.
11 mW/°C 100 mA 1.
05 mA/°C 3A -.
8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.
): Response Time @ IF = 20 mA Rise: 1.
0 µs Fall: 1.
0 µs Lead Soldering Temperature: (1.
6 mm from case, 5 seconds max.
) 5.
0V 10 µA 880 nm 35 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @...


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