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VTE1113

PerkinElmer Optoelectronics
Part Number VTE1113
Manufacturer PerkinElmer Optoelectronics
Description GaAs Infrared Emitting Diodes
Published Apr 17, 2005
Detailed Description GaAs Infrared Emitting Diodes TO-46 Lensed Package — 940 nm VTE1113 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 24...
Datasheet PDF File VTE1113 PDF File

VTE1113
VTE1113

Overview
GaAs Infrared Emitting Diodes TO-46 Lensed Package — 940 nm VTE1113 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .
018" X .
018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): -55°C to 125°C 200 mW 2.
11 mW/°C 100 mA 1.
05 mA/°C 3.
0 A -.
8%/°C Maximum Reverse Voltage: Ma...


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