Part Number
|
APT50M60JN |
Manufacturer
|
Advanced Power Technology |
Description
|
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Published
|
Apr 23, 2005 |
Detailed Description
|
D
S G D
S
G S
SO
2 T-
27
APT50M60JN 500V 71A 0.06OΩ
"UL Recognized" File No. E145592 (S)
ISOTOP®
POWER MOS IV ®...
|
Datasheet
|
APT50M60JN
|
Overview
D
S G D
S
G S
SO
2 T-
27
APT50M60JN 500V 71A 0.
06OΩ
"UL Recognized" File No.
E145592 (S)
ISOTOP®
POWER MOS IV ®
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor
1
SINGLE DIE ISOTOP® PACKAGE
All Ratings: TC = 25°C unless otherwise specified.
APT 50M60JN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
500 71 284 ± 30 690 5.
52 -55 to 150 300
and Inductive Current Clamped
Volts Watts W/°C °C
Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Se...
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