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APT50M60JN

Part Number	APT50M60JN
Manufacturer	Advanced Power Technology
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Published	Apr 23, 2005
Detailed Description	D S G D S G S SO 2 T- 27 APT50M60JN 500V 71A 0.06OΩ "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV ®...
Datasheet	APT50M60JN PDF File

Overview

D S G D S G S SO 2 T- 27 APT50M60JN 500V 71A 0.
06OΩ "UL Recognized" File No.
E145592 (S) ISOTOP® POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor 1 SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified.
APT 50M60JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 71 284 ± 30 690 5.
52 -55 to 150 300 and Inductive Current Clamped Volts Watts W/°C °C Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Se...

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